pnp bdx20 08/11/2012 comset semiconductors 1 | 3 s s i i l l i i c c o o n n t t r r a a n n s s i i s s t t o o r r s s e e p p i i t t a a x x i i a a l l b b a a s s e e the bdx20 are mounted in to-3 metal package. lf large signal power amplification high current fast switching thermal fatigue inspection compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector to base voltage -60 v v ceo collector-emitter voltage -140 v v cex collector-emitter voltage v be =1.5 v -160 v v ebo emitter-base voltage -7 v i c collector current ? continuous -10 a i b base current ? continuous -7 a p tot total device dissipation 117 w t j junction temperature 200 c t s storage temperature -65 to +200 c thermal characteristics symbol ratings value unit r thjc thermal resistance, junction to case 1.5 c/w
pnp bdx20 08/11/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo(sus) collector-emitter sustaining voltage (*) i c =-200 ma, i b =0 -140 - - v v cex collector-emitter breakdown voltage (*) i c =-100 ma, v be =1.5 v -160 - - v i cex collector cutoff current v ce =-140 v, v be =1.5 v - - -1.0 ma v ce =-140 v, v be =1.5 v t case =150c - - -10 i cbo collector-base cutoff current v cb =-140 v, i e =0 - - -1.0 ma i ebo emitter-base cutoff current v be =-7.0 v, i c =0 - - -5.0 ma h 21e static forward current transfer ratio (*) i c =-3 a, v ce =-4 v 20 - 70 - i c =10 a, v ce =-4 v - 10 - v ce(sat) collector-emitter saturation voltage (*) i c =-3 a, i b =-0.3 a - - -1.0 v i c =-10 a, i b =-2 a - - -5.0 v be base-emitter voltage (*) i c =-3 a, v ce =-4 v - -1.7 - v i c =-10 a, v ce =-4 v - -5.7 - f t transition frequency v ce =-10 v, i c =-1 a f=1.0 mhz 4 - - mhz in accordance with jedec registration data (*) pulse width 300 s, duty cycle 2.0%
pnp bdx20 08/11/2012 comset semiconductors 3 | 3 mechanical data case to-3 revised october 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
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